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Zeiss Crossbeam 350 (coming soon)

Focused lon Beam-SEM

  • lon beam system

  • Accelerating voltage: 0.5 kV~30 kV;

  • lon beam resolution: 3 nm@30 kV;

  • Beam intensity: 1 pA~100 nA;

  • Magnification times: 300 ×~500 k×.

Electron beam system

  • Electron gun type: schottky field emission filament:

  • Accelerating voltage: 0.02 kV~30 kV;

  • Minimum resolution: 0.9 nm@15 kV;

  • Beam intensity: Maximum beam current 20 nA;

  • Magnification times: 12 ×-2000 k×.

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X-Nano TEM specimen holder

  • High voltage mode range: -100 V~+100 V；

  • Coarse range: X/Y/Z directions 2 mm；

  • Fine tuning range: X direction 1 μm,Y/Z direction 7 μm;

  • Fine-tuned resolution: X direction ≤0.1 nm, Y/Z direction≤0.2 nm;

  • Current measuring range: 10 nA~10 mA.

Hysitron PI 89 SEM PicoIndenter

Nanoindentation

  • Maximum load: 500 mN;

  • Maximum pressing displacement: 15 μm.

Nanoscratch

  • Maximum transverse force: 30 mN;

  • Maximum lateral displacement: 20 μm.

lon Milling

  • Accelerating voltage: 0.1 keV~10 keV;

  • Beam spot size: 300 μm~5 mm;

  • lon beam current density: 10 mA/cm²;

  • lon beam current density: -15°~+10°.

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